Synaptic Plasticity of Memristors Based on ZnO Thin Films Fabricated by PLD

Yanxia Liang; Jianbiao Chen; Shuangju Jia; Lizhi Zhang; Mingrui Liu; Xuhui Tian; Tao Ye; Hongyu Li

doi:10.6911/WSRJ.202605_12(5).0001

Authors

Yanxia Liang
Jianbiao Chen
Shuangju Jia
Lizhi Zhang
Mingrui Liu
Xuhui Tian
Tao Ye
Hongyu Li

DOI:

https://doi.org/10.6911/WSRJ.202605_12(5).0001

Keywords:

Memristor; Synaptic Plasticity; Resistance Switching; ZnO; PLD.

Abstract

Cu/ZnO/Cu memristive devices with planar-structure were successfully fabricated using pulsed laser deposition (PLD) technology by regulating substrate temperature. At a substrate temperature of 500 °C, ZnO thin film of the device exhibits smooth and uniform surface morphology demonstrated by systematic characterization. Such memristive devices show excellent dynamic resistive switching behavior under electrical pulse stimulation, with their resistance states capable of being precisely modulated by the polarity, amplitude, and duration of electrical pulses. Leveraging this tunable resistive switching property, the devices successfully emulate various biological synaptic behaviors including excitatory postsynaptic current and paired-pulse facilitation, demonstrating promising potential for applications in neuromorphic computing.

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